International Journal of Science and Research (IJSR)

International Journal of Science and Research (IJSR)
Call for Papers | Fully Refereed | Open Access | Double Blind Peer Reviewed

ISSN: 2319-7064


Downloads: 120

India | Electronics Communication Engineering | Volume 4 Issue 8, August 2015 | Pages: 329 - 332


Low Power 1 bit Adiabatic SRAM Cell Design

Shobha Goutam, D. K. Mishra

Abstract: This paper presents the design of an Adiabatic static RAM with a bit line driver that reduces power dissipation by efficiently recovering energy from the bit capacitors in 180nm technology. Cadence simulations of a simple 1 bit Asymmetrical Adiabatic SRAM, that includes the energy recovering bit line drivers, and the sense amplifiers, show over 35 % of power savings at 1.8 V, in comparison with its conventional counterpart.

Keywords: SRAM Static Random Access Memory, Adiabatic circuitry, charge recovery low-energy design, low-power computing techniques



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