Downloads: 25
Analysis Study Research Paper | Manufacturing Technology | Volume 14 Issue 2, February 2025 | Pages: 1465 - 1467 | United States
Optimizing Cobalt Integration for <10nm FinFET Technology for Enhanced Middle-of-Line Contact Performance
Abstract: The semiconductor industry's progression to
Keywords: 10nm FinFET, Cobalt Integration, Middle - of - Line (MOL), Chemical - Mechanical Polishing (CMP), Titanium Nitride (TiN), Tungsten Gate, TMAH Recess, Semiconductor Manufacturing, Contact Resistance, Yield Optimization
How to Cite?: Sugirtha Krishnamurthy, "Optimizing Cobalt Integration for <10nm FinFET Technology for Enhanced Middle-of-Line Contact Performance", Volume 14 Issue 2, February 2025, International Journal of Science and Research (IJSR), Pages: 1465-1467, https://www.ijsr.net/getabstract.php?paperid=SR25223071710, DOI: https://dx.doi.org/10.21275/SR25223071710