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Research Paper | Electronics Engineering | Volume 11 Issue 5, May 2022 | Pages: 737 - 738 | India
Bond length Distortion in III - V Semiconductors
Abstract: Semiconductors are present in periodic table of Group III - V. In this paper, impurities doped with Al- series and Ga-Series such as AlP, AlAs, AlSb and GaP, GaAs, GaSb. The value of distorted bond length found corresponds with orbital parameter, covalance and empirical parameter ang hybrid energy used as input data.
Keywords: semiconductors, bond length, impurity atom and host atom
How to Cite?: Kalyan Singh, P. K. Sharma, "Bond length Distortion in III - V Semiconductors", Volume 11 Issue 5, May 2022, International Journal of Science and Research (IJSR), Pages: 737-738, https://www.ijsr.net/getabstract.php?paperid=SR22418103543, DOI: https://dx.doi.org/10.21275/SR22418103543