International Journal of Science and Research (IJSR)

International Journal of Science and Research (IJSR)
Call for Papers | Fully Refereed | Open Access | Double Blind Peer Reviewed

ISSN: 2319-7064


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Iraq | Physics Science | Volume 4 Issue 9, September 2015 | Pages: 1986 - 1989


Barrier Height and Changing Insulator Thickness of Thin Film MIS Junctions

Dr. Jassim Mohammed Salih Al-fahdawi

Abstract: Using thermal evaporation, metal-semiconductor and metal-insulator-semiconductor thin-films were prepared. By using experimental I-V and activation energy measurements, it was determined that barrier height () increases as the thickness of the insulator increases.

Keywords: THIN FILM MIS JUNCTIONS

How to Cite?: Dr. Jassim Mohammed Salih Al-fahdawi, "Barrier Height and Changing Insulator Thickness of Thin Film MIS Junctions", Volume 4 Issue 9, September 2015, International Journal of Science and Research (IJSR), Pages: 1986-1989, https://www.ijsr.net/getabstract.php?paperid=SUB158562, DOI: https://dx.doi.org/10.21275/SUB158562


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