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Research Paper | Physics Science | Iraq | Volume 4 Issue 9, September 2015

Barrier Height and Changing Insulator Thickness of Thin Film MIS Junctions

Dr. Jassim Mohammed Salih Al-fahdawi ^[2]

Abstract: Using thermal evaporation, metal-semiconductor and metal-insulator-semiconductor thin-films were prepared. By using experimental I-V and activation energy measurements, it was determined that barrier height () increases as the thickness of the insulator increases.

Keywords: THIN FILM MIS JUNCTIONS

Edition: Volume 4 Issue 9, September 2015,

Pages: 1986 - 1989