Barrier Height and Changing Insulator Thickness of Thin Film MIS Junctions
Abstract: Using thermal evaporation, metal-semiconductor and metal-insulator-semiconductor thin-films were prepared. By using experimental I-V and activation energy measurements, it was determined that barrier height () increases as the thickness of the insulator increases.
Keywords: THIN FILM MIS JUNCTIONS
How to Cite?: Dr. Jassim Mohammed Salih Al-fahdawi, "Barrier Height and Changing Insulator Thickness of Thin Film MIS Junctions", Volume 4 Issue 9, September 2015, International Journal of Science and Research (IJSR), Pages: 1986-1989, https://www.ijsr.net/getabstract.php?paperid=SUB158562, DOI: https://dx.doi.org/10.21275/SUB158562