Barrier Height and Changing Insulator Thickness of Thin Film MIS Junctions
International Journal of Science and Research (IJSR)

International Journal of Science and Research (IJSR)
Call for Papers | Fully Refereed | Open Access | Double Blind Peer Reviewed

ISSN: 2319-7064


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Research Paper | Physics Science | Iraq | Volume 4 Issue 9, September 2015 | Popularity: 6.2 / 10


     

Barrier Height and Changing Insulator Thickness of Thin Film MIS Junctions

Dr. Jassim Mohammed Salih Al-fahdawi


Abstract: Using thermal evaporation, metal-semiconductor and metal-insulator-semiconductor thin-films were prepared. By using experimental I-V and activation energy measurements, it was determined that barrier height () increases as the thickness of the insulator increases.


Keywords: THIN FILM MIS JUNCTIONS


Edition: Volume 4 Issue 9, September 2015


Pages: 1986 - 1989



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Dr. Jassim Mohammed Salih Al-fahdawi, "Barrier Height and Changing Insulator Thickness of Thin Film MIS Junctions", International Journal of Science and Research (IJSR), Volume 4 Issue 9, September 2015, pp. 1986-1989, https://www.ijsr.net/getabstract.php?paperid=SUB158562, DOI: https://www.doi.org/10.21275/SUB158562

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