Complementary Metal-Oxide Semiconductor: A Review

Komal Rohilla, Ritu Pahwa, Shaifali Ruhil

Abstract: In this paper we have focused on the complementary metal-oxide semiconductor technology. This paper covers overview of power consumption sources and discusses the techniques for reduction of power dissipation in high performance designs. Power dissipation is very serious matter in CMOS technology. The first section contains introduction, second section contains review of CMOS, third section contains overview of power consumption sources and leakage current mechanisms, fourth section contains techniques to reduce power dissipation, and the last section presents the conclusion and references.

Keywords: CMOS structure, Power consumption, Leakage currents, VTCMOS, MTCMOS

How to Cite?: Komal Rohilla, Ritu Pahwa, Shaifali Ruhil, "Complementary Metal-Oxide Semiconductor: A Review", Volume 4 Issue 4, April 2015, International Journal of Science and Research (IJSR), Pages: 1043-1047, https://www.ijsr.net/getabstract.php?paperid=SUB153132, DOI: https://dx.doi.org/10.21275/SUB153132

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