International Journal of Science and Research (IJSR)

International Journal of Science and Research (IJSR)
Call for Papers | Fully Refereed | Open Access | Double Blind Peer Reviewed

ISSN: 2319-7064


Downloads: 110 | Views: 189

Review Papers | Electronics & Communication Engineering | India | Volume 4 Issue 4, April 2015


Complementary Metal-Oxide Semiconductor: A Review

Komal Rohilla [2] | Ritu Pahwa | Shaifali Ruhil [2]


Abstract: In this paper we have focused on the complementary metal-oxide semiconductor technology. This paper covers overview of power consumption sources and discusses the techniques for reduction of power dissipation in high performance designs. Power dissipation is very serious matter in CMOS technology. The first section contains introduction, second section contains review of CMOS, third section contains overview of power consumption sources and leakage current mechanisms, fourth section contains techniques to reduce power dissipation, and the last section presents the conclusion and references.


Keywords: CMOS structure, Power consumption, Leakage currents, VTCMOS, MTCMOS


Edition: Volume 4 Issue 4, April 2015,


Pages: 1043 - 1047


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