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Experimental Research Paper | Material Science and Engineering | Volume 15 Issue 6, June 2026 | Pages: 127 - 133 | India
Theoretical Investigations of Insulator and Semiconductor Interface
Abstract: Metal-Insulator-Semiconductor (MIS) capacitors are widely used for investigating semiconductor surface properties and insulator characteristics. This work presents a comprehensive overview of MIS capacitance theory, ideal and non-ideal MIS capacitor behaviour, and techniques for determining interface state density. The study discusses capacitance-voltage (C-V) characteristics under accumulation, depletion, and inversion conditions, as well as the influence of fixed and mobile charges, work-function differences, and interface states. Various methods for interface state density determination, including Terman?s method, Berglund?s low-frequency method, quasi-static techniques, Q-V analysis, and conductance methods, are reviewed and compared. The analysis highlights the suitability of high-frequency C-V measurements for evaluating interface characteristics in MIS structures such as Au/CdTe/MCT systems.
Keywords: MIS Capacitor, Capacitance-Voltage (C-V) Characteristics, Interface State Density (Dit), Semiconductor Interfaces, Terman Method, Conductance Method, Surface States
How to Cite?: Desh Bandhu Sharma, "Theoretical Investigations of Insulator and Semiconductor Interface", Volume 15 Issue 6, June 2026, International Journal of Science and Research (IJSR), Pages: 127-133, https://www.ijsr.net/getabstract.php?paperid=SR26601205204, DOI: https://dx.doi.org/10.21275/SR26601205204