Properties of HgCdTe for Infrared Detector Applications
Abstract: Mercury Cadmium Telluride (HgCdTe, also known as MCT) is a leading semiconductor material for high-performance infrared detector applications due to its tunable band gap and excellent optoelectronic properties. This review examines its structural, electronic, and transport characteristics relevant to short-wave, mid-wave, and long-wave infrared detection. Detector architectures, including photoconductive, photovoltaic, and metal-insulator-semiconductor configurations, are discussed. The influence of alloy composition on band gap, carrier concentration, mobility, and lattice properties is evaluated. HgCdTe remains highly attractive for thermal imaging, remote sensing, surveillance, and aerospace applications, although challenges related to surface stability and passivation remain.
Keywords: HgCdTe, Mercury Cadmium Telluride, Infrared Detectors, Band Gap Engineering, Photovoltaic Detectors, Thermal Imaging, Semiconductor Materials, Infrared Sensors
How to Cite?: Desh Bandhu Sharma, "Properties of HgCdTe for Infrared Detector Applications", Volume 15 Issue 5, May 2026, International Journal of Science and Research (IJSR), Pages: 1384-1390, https://www.ijsr.net/getabstract.php?paperid=SR26522212626, DOI: https://dx.doi.org/10.21275/SR26522212626