International Journal of Science and Research (IJSR)

International Journal of Science and Research (IJSR)
Call for Papers | Fully Refereed | Open Access | Double Blind Peer Reviewed

ISSN: 2319-7064

Downloads: 129 | Views: 199

Review Papers | Electrical Engineering | India | Volume 5 Issue 6, June 2016 | Rating: 6.2 / 10

A Trench Gate Power MOSFET with Reduced Gate Charge - A Review

Harsh Sharma [4]

Abstract: In this paper we have written the review of the work done by Ying Wang, Yan-Juan Liu, Cheng-Hao Yu, and Fei Cao in simulating a novel trench gate power MOSFET with reduced gate charge. They worked with a 2-dimensional device simulator named ATLAS and simulated their MOSFET to obtain input, output and transfer characteristics. It is found that the gate charge is reduced by 49.5 % without increasing the value of Ron. This is done so as to increase the switching speed of the device.

Keywords: Gate Charge, Switching Speed

Edition: Volume 5 Issue 6, June 2016,

Pages: 677 - 679

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