The Effects of Crystallographic Orientation of Tl2Se Crystals on Hall Mobility

G. A. Gamal, Salah M. M. Salman, M. M. Kahlid

Abstract: New crystal growth method was used in the present investigation to grow the Tl2Se crystals. Electrical conductivity has been measured in two crystallographic directions (// and) for Tl2Se crystals. In addition, our work was extended to cover Hall Effect phenomenon in the same temperature range (225-500K). In this way, the Hall mobility behavior and the scattering mechanism of the charge carriers were discussed. The energy gap and the ionization energy ware estimated as an important physical constant for the first time for this semiconductor compound

Keywords: crystallographic orientation, Hall mobility, Tl2Se