International Journal of Science and Research (IJSR)

International Journal of Science and Research (IJSR)
Call for Papers | Fully Refereed | Open Access | Double Blind Peer Reviewed

ISSN: 2319-7064

Downloads: 151 | Views: 217

Research Paper | Physics Science | Iraq | Volume 7 Issue 1, January 2018 | Rating: 6.2 / 10

Electrical Properties of SiO2/PSi Hetero Junction Prepared by Electrochemical Etching Process

Hussain Kazaal | Ramiz Alansari | Kadhim Aadim | Wassan Dhia

Abstract: In this paper, the electrical properties of porous silicon (PSi) structure fabricated by using the electrochemical etching process in HF acid, SiO2/PSi hetero junction made by deposition of SiO2 layer on porous silicon. The dark I-V characteristics synthesized by electrochemical etching are presented of hetero junction showed are strong depended on etching time. The ideality factor and saturation current of hetero junction are calculated from I-V under forward bias. C-V measurements confirmed that the prepared hetero junctions are abrupt type.

Keywords: porous silicon, HF acid

Edition: Volume 7 Issue 1, January 2018,

Pages: 772 - 775

How to Download this Article?

Type Your Valid Email Address below to Receive the Article PDF Link

Verification Code will appear in 2 Seconds ... Wait