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Research Paper | Physics Science | Volume 7 Issue 1, January 2018 | Pages: 772 - 775 | Iraq
Electrical Properties of SiO2/PSi Hetero Junction Prepared by Electrochemical Etching Process
Abstract: In this paper, the electrical properties of porous silicon (PSi) structure fabricated by using the electrochemical etching process in HF acid, SiO2/PSi hetero junction made by deposition of SiO2 layer on porous silicon. The dark I-V characteristics synthesized by electrochemical etching are presented of hetero junction showed are strong depended on etching time. The ideality factor and saturation current of hetero junction are calculated from I-V under forward bias. C-V measurements confirmed that the prepared hetero junctions are abrupt type.
Keywords: porous silicon, HF acid
How to Cite?: Hussain Kazaal, Ramiz Alansari, Kadhim Aadim, Wassan Dhia, "Electrical Properties of SiO2/PSi Hetero Junction Prepared by Electrochemical Etching Process", Volume 7 Issue 1, January 2018, International Journal of Science and Research (IJSR), Pages: 772-775, https://www.ijsr.net/getabstract.php?paperid=ART20176846, DOI: https://dx.doi.org/10.21275/ART20176846