Rate the Article: Acoustic Phonon Limited Cross Section for the Capture of an Electron by an Attractive Trap in Semiconductor Inversion Layer, IJSR, Call for Papers, Online Journal
International Journal of Science and Research (IJSR)

International Journal of Science and Research (IJSR)
Call for Papers | Fully Refereed | Open Access | Double Blind Peer Reviewed

ISSN: 2319-7064

Downloads: 96 | Views: 315

Research Paper | Physics Science | India | Volume 4 Issue 2, February 2015 | Rating: 6.1 / 10


Acoustic Phonon Limited Cross Section for the Capture of an Electron by an Attractive Trap in Semiconductor Inversion Layer

A. K. Ghorai


Abstract: At low lattice temperature (


Keywords: Semiconductor inversion layer, recombination, acoustic phonon, capture cross section


Edition: Volume 4 Issue 2, February 2015,


Pages: 1837 - 1840



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