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Research Paper | Physics Science | India | Volume 4 Issue 2, February 2015 | Popularity: 6.1 / 10
Acoustic Phonon Limited Cross Section for the Capture of an Electron by an Attractive Trap in Semiconductor Inversion Layer
A. K. Ghorai
Abstract: At low lattice temperature (
Keywords: Semiconductor inversion layer, recombination, acoustic phonon, capture cross section
Edition: Volume 4 Issue 2, February 2015
Pages: 1837 - 1840
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A. K. Ghorai, "Acoustic Phonon Limited Cross Section for the Capture of an Electron by an Attractive Trap in Semiconductor Inversion Layer", International Journal of Science and Research (IJSR), Volume 4 Issue 2, February 2015, pp. 1837-1840, https://www.ijsr.net/getabstract.php?paperid=SUB151652, DOI: https://www.doi.org/10.21275/SUB151652