Acoustic Phonon Limited Cross Section for the Capture of an Electron by an Attractive Trap in Semiconductor Inversion Layer
Abstract: At low lattice temperature (
Keywords: Semiconductor inversion layer, recombination, acoustic phonon, capture cross section
How to Cite?: A. K. Ghorai, "Acoustic Phonon Limited Cross Section for the Capture of an Electron by an Attractive Trap in Semiconductor Inversion Layer", Volume 4 Issue 2, February 2015, International Journal of Science and Research (IJSR), Pages: 1837-1840, https://www.ijsr.net/getabstract.php?paperid=SUB151652, DOI: https://dx.doi.org/10.21275/SUB151652