A Review on Advancements beyond Conventional Transistor Technology

Shilpa Goyal, Sachin Kumar

Abstract: As continuous geometric scaling of conventional metal oxide semiconductor field effect transistors (MOSFETs) are facing many fundamental challenges, therefore, new alternatives has to be introduced to provide high performance integrated chips. This paper gives insight on various recent innovations in device engineering for microelectronics and nanoelectronics. The recent developments are mainly based on new materials and new structures which include strained Si, high-K/metal gate, SOI technology, multiple gates. In the proposed paper concepts beyond CMOS, carbon nanotube FET (CNTFET) and tunnel FET (TFET) are examined which brings a revolutionary change to semiconductor industry.

Keywords: MOSFETs, Strained Si, SOI, multiple gates, CNTFET, TFET

How to Cite?: Shilpa Goyal, Sachin Kumar, "A Review on Advancements beyond Conventional Transistor Technology", Volume 4 Issue 4, April 2015, International Journal of Science and Research (IJSR), Pages: 3064-3068, https://www.ijsr.net/getabstract.php?paperid=SUB153884, DOI: https://dx.doi.org/10.21275/SUB153884