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Review Papers | Electronics & Communication Engineering | India | Volume 4 Issue 4, April 2015
A Review on Advancements beyond Conventional Transistor Technology
Shilpa Goyal | Sachin Kumar [15]
Abstract: As continuous geometric scaling of conventional metal oxide semiconductor field effect transistors (MOSFETs) are facing many fundamental challenges, therefore, new alternatives has to be introduced to provide high performance integrated chips. This paper gives insight on various recent innovations in device engineering for microelectronics and nanoelectronics. The recent developments are mainly based on new materials and new structures which include strained Si, high-K/metal gate, SOI technology, multiple gates. In the proposed paper concepts beyond CMOS, carbon nanotube FET (CNTFET) and tunnel FET (TFET) are examined which brings a revolutionary change to semiconductor industry.
Keywords: MOSFETs, Strained Si, SOI, multiple gates, CNTFET, TFET
Edition: Volume 4 Issue 4, April 2015,
Pages: 3064 - 3068