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Research Paper | Chemistry | Volume 4 Issue 2, February 2015 | Pages: 848 - 853 | Egypt
Characteristics of ZnO-based semiconductor ceramics doped with GeO2 and PbO
Abstract: The effect of GeO2 and PbO on physical, microstructure, and the electrical properties of ZnO based ceramics is investigated. A decrease in water absorption was recorded with rise in maturing temperature and increase in time of soaking. A minimum water absorption was displayed in specimens fired at 1000 oC for 2 hours. The average grain size decreases initially as GeO2 content increases up to 2 mol %. The grain size of ZnO decreases greatly, as the Ge-rich phase inhibits grain growth ZnO decreases. The decrease of capacitance in (pf), dielectric constant (-) and consequently increase (AC) conductivity with increasing frequency (1-20) KHz was investigated.
Keywords: ZnO based ceramics, semiconductors, varistors
How to Cite?: Osama A. Desouky, Mostafa M. H. Khalil, "Characteristics of ZnO-based semiconductor ceramics doped with GeO2 and PbO", Volume 4 Issue 2, February 2015, International Journal of Science and Research (IJSR), Pages: 848-853, https://www.ijsr.net/getabstract.php?paperid=SUB151265, DOI: https://dx.doi.org/10.21275/SUB151265