International Journal of Science and Research (IJSR)

International Journal of Science and Research (IJSR)
Call for Papers | Fully Refereed | Open Access | Double Blind Peer Reviewed

ISSN: 2319-7064

Downloads: 125 | Views: 160

Research Paper | Chemistry | Egypt | Volume 4 Issue 2, February 2015

Characteristics of ZnO-based semiconductor ceramics doped with GeO2 and PbO

Osama A. Desouky [3] | Mostafa M. H. Khalil [2]

Abstract: The effect of GeO2 and PbO on physical, microstructure, and the electrical properties of ZnO based ceramics is investigated. A decrease in water absorption was recorded with rise in maturing temperature and increase in time of soaking. A minimum water absorption was displayed in specimens fired at 1000 oC for 2 hours. The average grain size decreases initially as GeO2 content increases up to 2 mol %. The grain size of ZnO decreases greatly, as the Ge-rich phase inhibits grain growth ZnO decreases. The decrease of capacitance in (pf), dielectric constant (-) and consequently increase (AC) conductivity with increasing frequency (1-20) KHz was investigated.

Keywords: ZnO based ceramics, semiconductors, varistors

Edition: Volume 4 Issue 2, February 2015,

Pages: 848 - 853

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