Impact of Post-Annealing at 80 °C on Oxide Fixed Charges in Au/CdTe/HgCdTe MIS Structures

Desh Bandhu Sharma

Abstract: The effect of hydrogen post-annealing on the interface characteristics of Au/CdTe/HgCdTe Metal-Insulator-Semiconductor (MIS) structures was investigated through capacitance-voltage (C-V) measurements at 77 K and 1 MHz. CdTe was employed as a passivation layer for HgCdTe (MCT) owing to its lattice compatibility, wide bandgap, and infrared transparency. Five MIS structures were fabricated with varying post-annealing durations (0, 2, 4, 5, and 6 hours) in hydrogen atmosphere at 80 °C. The results revealed a significant reduction in oxide fixed charge density after post-annealing, decreasing from approximately -2.56 ? 10¹⁴ ions/cm² for the unannealed sample to about -1.64 ? 10¹¹ ions/cm² after 6 hours of annealing. The reduction in fixed charges indicates improved interface quality due to hydrogen passivation of dangling bonds and defects at the CdTe/HgCdTe interface. The study confirms that hydrogen post-annealing is an effective technique for enhancing the electrical performance of HgCdTe-based MIS devices.

Keywords: HgCdTe (MCT), CdTe Passivation, MIS Structure, Hydrogen Annealing, Oxide Fixed Charges Capacitance?Voltage (C-V) Analysis, Infrared Detectors, Interface States, Semiconductor Devices and Thin Films

How to Cite?: Desh Bandhu Sharma, "Impact of Post-Annealing at 80 °C on Oxide Fixed Charges in Au/CdTe/HgCdTe MIS Structures", Volume 15 Issue 6, June 2026, International Journal of Science and Research (IJSR), Pages: 350-355, https://www.ijsr.net/getabstract.php?paperid=SR26604194050, DOI: https://dx.doi.org/10.21275/SR26604194050

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