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Research Paper | Material Science and Engineering | Volume 15 Issue 5, May 2026 | Pages: 1622 - 1624 | India
Optimization of Deposition Conditions and Photothermal Annealing of CdTe Thin Films for HgCdTe Passivation Applications
Abstract: This study investigates the optimization of flash evaporation deposition conditions for CdTe thin films intended for HgCdTe passivation applications. CdTe films were deposited under optimized vacuum, boat temperature, and deposition rate conditions, followed by structural, optical, and electrical characterization. XRD confirmed zinc-blende phase formation, while EDAX indicated near-stoichiometric composition. Photothermal annealing in hydrogen significantly influenced film properties. Direct hydrogen annealing increased room-temperature resistivity from 2.4 ? 104ohm-cm to 3.23 ? 105 ohm-cm and increased optical band gap from 1.435 eV to 1.495 eV with increasing annealing duration. Hydrogen treatment in the presence of mercury reduced resistivity and band gap, indicating altered defect behavior. The findings suggest that optimized CdTe thin films are suitable candidates for HgCdTe passivation in infrared detector applications.
Keywords: CdTe thin films, flash evaporation, HgCdTe passivation, photothermal annealing, semiconductor thin films, optical band gap, electrical resistivity, infrared detectors
How to Cite?: Desh Bandhu Sharma, "Optimization of Deposition Conditions and Photothermal Annealing of CdTe Thin Films for HgCdTe Passivation Applications", Volume 15 Issue 5, May 2026, International Journal of Science and Research (IJSR), Pages: 1622-1624, https://www.ijsr.net/getabstract.php?paperid=SR26525113013, DOI: https://dx.dx.doi.org/10.21275/SR26525113013