Annealing- Induced Changes in the Optical Properties of Hydrogenated Amorphous Silicon Thin Films Fabricated by High-Power PECVD

Aravind Kumar, Pawan Kumar, Chanchal Kaushik, Sai Tripti Samal, Monika Bassi, Rashmi Menon

Abstract: The crystallization of hydrogenated amorphous silicon (a-Si:H) thin films was deposited by plasma-enhanced chemical vapor deposition technique (PECVD), shows significant scientific and technological interest. Conventionally, crystallization in a-Si:H films is achieved, through thermal annealing or metal-induced crystallization. Our study focus that (a-Si:H) thin films deposited at high radio frequency (RF) power (>0.2 W/cm?) using the PECVD technique (HR-031 at 1 W and Sample no HR-022 at 7 W),ie exhibit embedded crystallites within the (a-Si:H) matrix. Furthermore, post-deposition vacuum thermal annealing at 250?C and 300?C expedites an increase in crystallite size. UV-Vis spectroscopy were analyzed the optical properties and records the absorption or Transmission spectra. Electrical conductivity, dark conductivity and photo conductivity of (a-Si:H) thin films were measured as a function of temperature within the range of 300?C to 250?C. The structural properties were measured using Raman Spectra, FT-IR, XRD (X ? Ray diffraction), SEM and Atomic Force Microscopy (AFM). The conductivity values were evaluated both before and after the annealing process. Atomic force microscopy (AFM) analysis confirmed the presence of crystallites in the annealed films, providing insight into the surface morphology and structural modifications induced by thermal annealing.

Keywords: PECVD Technique, crystallization, annealing, conductivity, Transmission spectra

How to Cite?: Aravind Kumar, Pawan Kumar, Chanchal Kaushik, Sai Tripti Samal, Monika Bassi, Rashmi Menon, "Annealing- Induced Changes in the Optical Properties of Hydrogenated Amorphous Silicon Thin Films Fabricated by High-Power PECVD", Volume 14 Issue 10, October 2025, International Journal of Science and Research (IJSR), Pages: 36-44, https://www.ijsr.net/getabstract.php?paperid=SR25928232405, DOI: https://dx.doi.org/10.21275/SR25928232405