A Study of Elastic Constants and Thermal Properties of the Semiconductor InAs

Vinu T P, Tojomon Mathew

Abstract: The development of semiconductor technology relies heavily on an in-depth understanding of material properties. This research presents a novel analytical framework for investigating the anharmonic behavior of long-wavelength acoustic phonons in Indium Arsenide (InAs), a III-V semiconductor known for its high electron mobility and optoelectronic relevance. The unique integration of Born and Huang?s deformation potential theory with Murnaghan?s finite strain approach enables the accurate extraction of both second-order and third-order elastic constants parameters that are crucial for describing nonlinear elastic behavior and phonon-phonon interactions under strain. In contrast to prior studies that rely solely on linear approximations or empirical models, this study provides a semi-analytical methodology that enhances predictive accuracy and material insight. Additionally, the computation of Gr?neisen parameters for specific phonon modes and the evaluation of the Anderson-Gr?neisen coefficient at cryogenic temperatures offer new insights into thermal expansion and anharmonic thermodynamic behavior at the nanoscale.

Keywords: Elastic Constants, Gr?neisen Parameter, Thermal Expansion, Anisotropy

How to Cite?: Vinu T P, Tojomon Mathew, "A Study of Elastic Constants and Thermal Properties of the Semiconductor InAs", Volume 14 Issue 8, August 2025, International Journal of Science and Research (IJSR), Pages: 918-919, https://www.ijsr.net/getabstract.php?paperid=SR25817103134, DOI: https://dx.doi.org/10.21275/SR25817103134