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Analysis Study Research Paper | Earth Science and Engineering | India | Volume 11 Issue 11, November 2022
Enhancing Electronic Performance with a Gallium Oxide Semiconductor
Abstract: In order to facilitate future communications, the digitalization of society, and the development of applications for artificial intelligence, robust electrical components are absolutely necessary. They should have low energy consumption while achieving ever increasing power densities, which would result in increased operational efficacy. Their footprints should be as tiny as feasible. The purpose of the research is to define the frequency and power limitations for the Gallium Oxide semiconductor, to describe the kind of doping that is suited for Gallium Oxide semiconductors, and to offer a review of defect characterisation using optical and electrical spectroscopic techniques. Because there is no minority carrier storage effect in SBD and its switching loss is quite low, it is beginning to replace p-n junction diodes as a component in power electronic systems as wide bandgap (WBG) semiconductor material technology advances. This is due to the fact that SBD devices based on WBG semiconductors have a lower switching loss. In a-Ga2O3 MOSFETs, sluggish trapping and detrapping as well as the associated threshold voltage variations are regularly seen. This makes it anything but a simple problem to solve. A mapping of the interface states as well as its optimization is essential for each potentially promising dielectric material. Additionally, typical stability studies, such as Positive Bias Temperature Instability, must also be performed (PBTI).
Keywords: Semiconductor, Gallium oxide, electronics, wide bandgap
Edition: Volume 11 Issue 11, November 2022,
Pages: 171 - 178