Mechanism of Power Dissipation Capability of Power MOSFET Devices: Comparative Study between LDMOS and VDMOS Transistors

Aman Kumar Srivastav

Abstract: In this paper, the author has tried to understand the electrical-thermal coupling so as to understand the limits of power dissipation and he has compared the power dissipation in the two devices LDMOS and VDMOS. He has also tried to understand the mechanism of the power dissipation in both these devices.

Keywords: Electrical-thermal coupling, Lateral/Vertical Diffused metal-oxide semiconductor field effect transistor LDMOS/VDMOS, Zener Clamp, Snapback breakdown, RESURF Reduced surface field

How to Cite?: Aman Kumar Srivastav, "Mechanism of Power Dissipation Capability of Power MOSFET Devices: Comparative Study between LDMOS and VDMOS Transistors", Volume 5 Issue 6, June 2016, International Journal of Science and Research (IJSR), Pages: 653-656, https://www.ijsr.net/getabstract.php?paperid=NOV164166, DOI: https://dx.doi.org/10.21275/NOV164166