International Journal of Science and Research (IJSR)

International Journal of Science and Research (IJSR)
Call for Papers | Fully Refereed | Open Access | Double Blind Peer Reviewed

ISSN: 2319-7064


Downloads: 117 | Views: 204

Research Paper | Electronics & Communication Engineering | Russia | Volume 8 Issue 10, October 2019


4H-SiC P-i-N Diodes: Development of Technology and Research of Microwave Switches Based on it

A.A. Lebedev | A.V. Kirillov | L.P. Romanov | A.V. Zubov | A.M. Strelchuk


Abstract: The technology of microwave p-i-n diodes based on silicon carbide (SiC) has been developed. Using this diodes manufactured switches for 3-cm range. It is shown that the developed devices have an operating power of about 10 times the operating power of switches based on Si diodes with an equal base thickness of 5 microns. Outlined ways to further optimize the technology of these devices.


Keywords: SiC, P-i-N diodes, microwave


Edition: Volume 8 Issue 10, October 2019,


Pages: 981 - 986


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