International Journal of Science and Research (IJSR)

International Journal of Science and Research (IJSR)
Call for Papers | Fully Refereed | Open Access | Double Blind Peer Reviewed

ISSN: 2319-7064

Downloads: 121 | Views: 164 | Monthly Hits: ⮙1

Research Paper | Computer Science & Engineering | India | Volume 7 Issue 12, December 2018

Using Magnetic Tunnel Junction to Model of SRAM as a Non Volatile SRAM

Veronica Sheran.E

Abstract: The internal memories used in FPGA circuit could limit their future use. Most FPGA circuits use SRAM based flip-flop as internal memory. But since SRAM is volatile, both the configuration and information stored is lost. Internal Flash technology is sometime used to replace the external memory. However, its slow re-programming and its limited number of writing cycles (up to 106) prevents its use to replace SRAM. By working at high writing and reading speed, MRAM (Magnetic RAM) technology is one of the best solutions to bring complete non-volatility to the FPGA technology while keeping the power dissipation low. An MRAM can be re-programmed 1012times and has a large retention time up to 10 years. This technology is now mature and a lot of progress in its development has been done lately.


Edition: Volume 7 Issue 12, December 2018,

Pages: 1192 - 1197

How to Download this Article?

Type Your Valid Email Address below to Receive the Article PDF Link

Verification Code will appear in 2 Seconds ... Wait