International Journal of Science and Research (IJSR)

International Journal of Science and Research (IJSR)
Call for Papers | Fully Refereed | Open Access | Double Blind Peer Reviewed

ISSN: 2319-7064


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Tanzania | Material Science | Volume 6 Issue 11, November 2017 | Pages: 1632 - 1636


The Effect of Argon Pressure on the Photoluminescent Properties of Laser Ablated SrAl2O4:Eu2+, Dy3+ Thin Films

Patrick D. Nsimama

Abstract: The morphological, elemental composition and Photoluminescence (PL) properties of laser ablated SrAl2O4Eu2+, Dy3+ thin films prepared at different Argon (Ar) pressures are reported. The Atomic Force Microscopy (AFM) and scanning electron microscopy (SEM) techniques were employed for the morphological data collection. The data for elemental composition were collected using the Energy Dispersive X-ray Spectrometer (EDS) and Fourier Transform Infra-Red (FTIR). The room temperature photoluminescence (PL) data collection was done by using Cary Eclipse fluorescence spectrophotometry. The films were excited by the UV light from the xenon lamp. The PL intensities of the films seem to vary proportionally with the Ar pressure, when other parameters are kept constant. The highest green emission PL peak for the films is at 526 nm wavelength, attributed to 4f65d1 4f7 Eu2+ transitions. AFM images with well defined grains are observed on the films deposited at higher Ar pressures. The EDS and FTIR elemental composition analysis reveals that that the films consist of elements and groups of SrAl2O4.

Keywords: SrAl2O4Eu2+, Dy3+, thin film, PL, AFM, SEM, FTIR, PLD



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