International Journal of Science and Research (IJSR)

International Journal of Science and Research (IJSR)
Call for Papers | Fully Refereed | Open Access | Double Blind Peer Reviewed

ISSN: 2319-7064

Downloads: 115 | Views: 149

Research Paper | Electronics & Communication Engineering | India | Volume 6 Issue 3, March 2017

Enhanced Model of Thin Film Organic Field Effect Transistor for Radiation Sensing

Silpa S. Prasad [3] | Devika R. Nair

Abstract: The driving mechanism for carrier-generated Organic Feld-Eect Transistors with pentacene and vanadium pentoxide layers is discussed in this paper. Large on-currents were observed in OFETs with 35-nm V2O5 layer. The proposed OFET also exhibits a low threshold voltage, which is a requirement for driving FETs. Sandwich-structured devices composed of pentacene and V2O5 layers with high carrier injection barriers are also investigated. Verifying the dependence of the I-V properties of the device on the V2O5 layer thickness and investigating the UV-visible absorption characteristics of a mixed layer of pentacene and V2O5 molecules, we propose a model drive principle for OFETs. The characterisation of the proposed OFET confirms the capability of the device to be used as a radiation sensor which could detect gamma radiations.

Keywords: X- Ray Diffraction, Energy Dispersive X-ray Spectroscopy, Fourier Transform Infrared Spectroscopy, Photoelectron Spectroscopy

Edition: Volume 6 Issue 3, March 2017,

Pages: 1258 - 1261

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