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India | Electronics Communication Engineering | Volume 6 Issue 3, March 2017 | Pages: 1258 - 1261
Enhanced Model of Thin Film Organic Field Effect Transistor for Radiation Sensing
Abstract: The driving mechanism for carrier-generated Organic Feld-Eect Transistors with pentacene and vanadium pentoxide layers is discussed in this paper. Large on-currents were observed in OFETs with 35-nm V2O5 layer. The proposed OFET also exhibits a low threshold voltage, which is a requirement for driving FETs. Sandwich-structured devices composed of pentacene and V2O5 layers with high carrier injection barriers are also investigated. Verifying the dependence of the I-V properties of the device on the V2O5 layer thickness and investigating the UV-visible absorption characteristics of a mixed layer of pentacene and V2O5 molecules, we propose a model drive principle for OFETs. The characterisation of the proposed OFET confirms the capability of the device to be used as a radiation sensor which could detect gamma radiations.
Keywords: X- Ray Diffraction, Energy Dispersive X-ray Spectroscopy, Fourier Transform Infrared Spectroscopy, Photoelectron Spectroscopy
How to Cite?: Silpa S. Prasad, Devika R. Nair, "Enhanced Model of Thin Film Organic Field Effect Transistor for Radiation Sensing", Volume 6 Issue 3, March 2017, International Journal of Science and Research (IJSR), Pages: 1258-1261, https://www.ijsr.net/getabstract.php?paperid=ART20171680, DOI: https://dx.doi.org/10.21275/ART20171680