Enhanced Model of Thin Film Organic Field Effect Transistor for Radiation Sensing

Silpa S. Prasad, Devika R. Nair

Abstract: The driving mechanism for carrier-generated Organic Feld-Eect Transistors with pentacene and vanadium pentoxide layers is discussed in this paper. Large on-currents were observed in OFETs with 35-nm V2O5 layer. The proposed OFET also exhibits a low threshold voltage, which is a requirement for driving FETs. Sandwich-structured devices composed of pentacene and V2O5 layers with high carrier injection barriers are also investigated. Verifying the dependence of the I-V properties of the device on the V2O5 layer thickness and investigating the UV-visible absorption characteristics of a mixed layer of pentacene and V2O5 molecules, we propose a model drive principle for OFETs. The characterisation of the proposed OFET confirms the capability of the device to be used as a radiation sensor which could detect gamma radiations.

Keywords: X- Ray Diffraction, Energy Dispersive X-ray Spectroscopy, Fourier Transform Infrared Spectroscopy, Photoelectron Spectroscopy