Ultraviolet Characteristics of a Silicon Inversion Layer for Applications in Radiometry
Abstract: The inversion-layer (IL) that can be induced in a silicon surface shows very good sensitivity and spectral response in the ultraviolet (UV) region of electromagnetic radiation. As such, it is possible to use this structure as a relatively cheap radiometer for UV radiation measurements. The fabrication process for such a device is shown to be relatively cheaper than that of a diffused pn-junction, which is the typical design for a photocell. Hence the construction of a relatively cheap UV radiometer is possible.
Keywords: ultraviolet, radiometry, silicon inversion layer, photocell
How to Cite?: Pearson V.C. Luhanga, "Ultraviolet Characteristics of a Silicon Inversion Layer for Applications in Radiometry", Volume 5 Issue 7, July 2016, International Journal of Science and Research (IJSR), Pages: 1308-1311, https://www.ijsr.net/getabstract.php?paperid=ART2016473, DOI: https://dx.doi.org/10.21275/ART2016473