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India | Electronics Communication Engineering | Volume 6 Issue 5, May 2017 | Pages: 1133 - 1136
Design and Implementation of High Speed and Low Power Consumption FinFET
Abstract: An application of FinFET Technology has opened new development in Nano-technology. Simulations show that FinFET structure should be scalable down to 10 nm. Formation of ultra thin fin enables suppressed short channel effects.
Keywords: DIBL, etches, FinFET, GIDL, hysteretic threshold, Mosfet
How to Cite?: Ragini Soni, Jyotsna Sagar, "Design and Implementation of High Speed and Low Power Consumption FinFET", Volume 6 Issue 5, May 2017, International Journal of Science and Research (IJSR), Pages: 1133-1136, https://www.ijsr.net/getabstract.php?paperid=9051702, DOI: https://dx.doi.org/10.21275/9051702