International Journal of Science and Research (IJSR)

International Journal of Science and Research (IJSR)
Call for Papers | Fully Refereed | Open Access | Double Blind Peer Reviewed

ISSN: 2319-7064


Downloads: 110 | Views: 177

M.Tech / M.E / PhD Thesis | Electronics & Communication Engineering | India | Volume 6 Issue 5, May 2017


Design and Implementation of High Speed and Low Power Consumption FinFET

Ragini Soni | Jyotsna Sagar


Abstract: An application of FinFET Technology has opened new development in Nano-technology. Simulations show that FinFET structure should be scalable down to 10 nm. Formation of ultra thin fin enables suppressed short channel effects.


Keywords: DIBL, etches, FinFET, GIDL, hysteretic threshold, Mosfet


Edition: Volume 6 Issue 5, May 2017,


Pages: 1133 - 1136


How to Download this Article?

Type Your Valid Email Address below to Receive the Article PDF Link


Verification Code will appear in 2 Seconds ... Wait

Top