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Research Paper | Physics Science | Volume 8 Issue 9, September 2019 | Pages: 584 - 588 | Iraq
Studying of Optoelectronic Properties for (NiO)x(MnO)1-X/Si Solar Cell
Abstract: We report the (NiO) x- ( MnO) 1-X thin films with different x content (0, 0.1, 0.2, 0.3) prepared by pulse laser deposition technique at RT using Nd: YAG laser of =1064 nm, average frequency 6 Hz and pulse duration 15 ns. These films were deposited on Si substrate to from the (NiO) x- ( MnO) 1-XHeterojunction for Solar Cells. The optical absorption spectra showed that all films have direct energy gap. The band gap energy of this films decreased with increasing x content. I-V measurements for heterojunctions. The short-circuit current (Isc), open circuit voltage (Voc), and fill factor ( F. F) have been studied, Also from I-V measurements it is observed that The best achieved efficiency was obtained around 3.1 % at (x=0.3) and also the value efficiency for (NiO) x- ( MnO) 1-Xheterojunction increases with increasing of x content for all samples.
Keywords: NiO x- MnO 1-X thin films, NiO x- MnO 1-X /Si Heterojunction, optical Properties, PLD technique
How to Cite?: Asmaa Natiq Mohammed Ali, "Studying of Optoelectronic Properties for (NiO)x(MnO)1-X/Si Solar Cell", Volume 8 Issue 9, September 2019, International Journal of Science and Research (IJSR), Pages: 584-588, https://www.ijsr.net/getabstract.php?paperid=17011901, DOI: https://dx.doi.org/10.21275/17011901