International Journal of Science and Research (IJSR)

International Journal of Science and Research (IJSR)
Call for Papers | Fully Refereed | Open Access | Double Blind Peer Reviewed

ISSN: 2319-7064


Downloads: 101

Research Paper | Aerospace Engineering | India | Volume 5 Issue 6, June 2016


Study of Electrical Properties of Nano Capacitor Fabricated by Thermal Evaporation Method for application in Storage Devices

Sumanta Kumar Tripathy | T.N.V. Prabhakara Rao


Abstract: The present paper work is about fabrication of nano-capacitor by thermal evaporation method and study of its capacitance variations. The metal insulator metal type nano-capacitor is prepared on corning7059 glass substrate as layer by layer grown by thermal evaporation method. Capacitance of the nano-capacitor is studied with varying frequency and thickness of the dielectric (SnO2) with precision LCZ meter) and digital multi meter from the observations it was noted that capacitance is increasing with decreasing the thickness of the insulator and at lower frequencies capacitance is more. The classically calculated results are compared with experimental work, it was noticed that capacitance increased drastically for the nano layer dielectric capacitors from nanofarads to millifarads. For the dielectric thickness of 800 nm nano-capacitor can store more energy than other 1000 nm and 500 nm thickness of dielectric nano-capacitors. Operating frequency of these nano-capacitors is from 40 Hz to 200 KHz. In this frequency range they exhibit capacitance in the order of millifarads, after that falls to micro farads range


Keywords: Nano-Capacitor, capacitance, thermal evaporation, MIM


Edition: Volume 5 Issue 6, June 2016,


Pages: 649 - 652


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How to Cite this Article?

Sumanta Kumar Tripathy, T.N.V. Prabhakara Rao, "Study of Electrical Properties of Nano Capacitor Fabricated by Thermal Evaporation Method for application in Storage Devices", International Journal of Science and Research (IJSR), Volume 5 Issue 6, June 2016, pp. 649-652, https://www.ijsr.net/get_abstract.php?paper_id=NOV164222

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