A CMOS 3?12-GHz Ultra wideband Low Noise Amplifier by Dual-Resonance Network
Abstract: A low-power and high power-gain (S21) ultra wide-band low noise amplifier (UWB LNA) with flat noise figure (NF) based on global foundries 0.13-m CMOS technology is reported. The load effect of common-gate (CG) topology is applied with dual-resonance load network for both wide band input matching and NF flatness. Combined with inductive-series peaking technique, the frequency response of CG-common-source cascade topology is further extended. The LNA circuit achieves the high and flat power gain of 13.5 1.5 dB with input return loss better than 13dB and a flat NF of 4.3 dB 0.4 dB for frequencies 3-12 GHz. The fabricated LNA occupies a die area of 1.09 0.8 mm2 including pads and draw 8.5 mW from 1.2 V dc supply.
Keywords: Common gate CG, common source CS, low noise amplifier LNA, matching network, ultra-wideband UWB
How to Cite?: Surabhi Katiyar, Bhawna Trivedi, "A CMOS 3?12-GHz Ultra wideband Low Noise Amplifier by Dual-Resonance Network", Volume 6 Issue 11, November 2017, International Journal of Science and Research (IJSR), Pages: 2152-2154, https://www.ijsr.net/getabstract.php?paperid=ART20178499, DOI: https://dx.doi.org/10.21275/ART20178499