International Journal of Science and Research (IJSR)

International Journal of Science and Research (IJSR)
Call for Papers | Fully Refereed | Open Access | Double Blind Peer Reviewed

ISSN: 2319-7064

A Review on Zinc Sulphide Nanostructure, Synthesis and Various Applications

Bijoy Barman

Abstract: Zinc Sulfide (ZnS) thin film has attracted increasing attention due to their potential applications in the new generation of nano-electronics and opto-electronics devices. The physical and chemical properties of ZnS have outstanding quality for different applications. Moreover, ZnS doped with various elements are creating a new era for both academic research and industrial applications. So, the optical properties of modified ZnS thin film will help us to find a suitable doping element for convenient deposition which may enhance the conductance and transmitting properties of the film. In this paper the synthesis of zinc sulfide nanoparticles by different routes has been discussed. The emergence of nanotechnology and the synthesis of nanomaterials have revolutionized the field of science and technology. ZnS tends to show the most promising nanoscale morphologies among the inorganic semiconductors thus possessing versatile novel properties and applications. These applications include their use in Field Emitting Diodes (FET), electroluminescence, sensors (UV-light sensors, gas sensors, biosensors), flat panel displays. This article begins with the brief introduction to ZnS its structure, description of physical, chemical and electronic properties. Further followed by the recent experiments conducted in order to improve its nanoscale properties and thus idealizing its applications.

Keywords: Zinc sulphide, ZnS Properties, Electroluminescence, Sensors

How to Cite?: Bijoy Barman, "A Review on Zinc Sulphide Nanostructure, Synthesis and Various Applications", Volume 13 Issue 11, November 2024, International Journal of Science and Research (IJSR), Pages: 685-690, https://www.ijsr.net/getabstract.php?paperid=SR241110223315, DOI: https://dx.doi.org/10.21275/SR241110223315

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