Comparative Analysis of Cu and Ag doped ZnO: Influence of Doping Concentration and Annealing Temperature on Optical and Electrical Properties

Vrushali P. Shelke

Abstract: In this work, Cu-doped and Ag-doped zinc oxide films were deposited using the sol-gel method. The impact of annealing temperature and doping concentration on optical and electrical properties were examined. It was noted that the annealing temperature has less effect on both the Cu-doped and Ag-doped zinc oxide films optical band gap energy. The minimum resistivity for Ag doped ZnO was From the study it was understood that Ag doped ZnO has lower resistivity as compared to Cu doped ZnO both at different doping concentrations and annealing temperatures.

Keywords: Solgel method, Ag doped ZnO, Cu doped ZnO , Annealing temperature, Electrical resistivity

How to Cite?: Vrushali P. Shelke, "Comparative Analysis of Cu and Ag doped ZnO: Influence of Doping Concentration and Annealing Temperature on Optical and Electrical Properties", Volume 12 Issue 12, December 2023, International Journal of Science and Research (IJSR), Pages: 1373-1375, https://www.ijsr.net/getabstract.php?paperid=SR231215085355, DOI: https://dx.doi.org/10.21275/SR231215085355