Doping Effect of Sn in a-Se based Chalcogenide Glasses

Satya Prakash Singh

Abstract: In order to perform well in a variety of applications, materials must be affordable, non-toxic, environmentally friendly, simple to synthesize and well competitive. The adaptability of these materials to several functions lays the groundwork for multidisciplinary research. Materials made of chalcogenides have also demonstrated this capability and could represent the solution to this problem in the future. Tin-based compound semiconductors have attracted enormous interest in photovoltaic and optoelectronic applications due to favorable band gap (1.0?1.3 eV) and higher absorption coefficient (105 cm-1). Doping of amorphous chalcogenide films by tin impurities assists in stabilizing the glassy matrix with respect to light exposure and thermal treatment. This review summarizes some Sn doped glass-forming systems and also the role of Sn metallic additive on structural modification, electrical and optical properties of Se rich binary, ternary and quaternary chalcogenide glasses.

Keywords: Density of defect states (DOS), Optical band gap, Dark conductivity, Photosensitivity

How to Cite?: Satya Prakash Singh, "Doping Effect of Sn in a-Se based Chalcogenide Glasses", Volume 11 Issue 8, August 2022, International Journal of Science and Research (IJSR), Pages: 1427-1433, https://www.ijsr.net/getabstract.php?paperid=SR22827010840, DOI: https://dx.doi.org/10.21275/SR22827010840

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