Downloading: Ultraviolet Characteristics of a Silicon Inversion Layer for Applications in Radiometry
International Journal of Science and Research (IJSR)

International Journal of Science and Research (IJSR)
www.ijsr.net | Open Access | Fully Refereed | Peer Reviewed International Journal

ISSN: 2319-7064



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Ultraviolet Characteristics of a Silicon Inversion Layer for Applications in Radiometry

Pearson V.C. Luhanga

Abstract: The inversion-layer (IL) that can be induced in a silicon surface shows very good sensitivity and spectral response in the ultraviolet (UV) region of electromagnetic radiation. As such, it is possible to use this structure as a relatively cheap radiometer for UV radiation measurements. The fabrication process for such a device is shown to be relatively cheaper than that of a diffused pn-junction, which is the typical design for a photocell. Hence the construction of a relatively cheap UV radiometer is possible.

Keywords: ultraviolet, radiometry, silicon inversion layer, photocell



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