Downloads: 120

Research Paper | Electrical Engineering | India | Volume 4 Issue 8, August 2015

Simulation of Solar Power System IGBT Based Inverter Transition to IGCT to Increase Output Performance

Vijay Pratap Singh ^[4] | B.S.S.P.M. Sharma

Abstract: this paper also propose a solar power energy system constiting of a IGCT inverters for converting boost dc supply of converter to controlled ac supply at input of load, a combined stracture of photovoltaic source, dc to dc step up booster and a four IGCT based inverter unit digit to supply continious ac power to the load. a simple and economic control with DC-dc converter is use for maximum power extraction from the photovoltaic array. due to the contol intermittend nature of both the converter and inverter photovoltaic energy source is added to the system for the purpose of ensuring regulated continious power flow. In industrial application, the insulated gate bipolar transistor (IGBT) is favorable the IGBT is a voltage controlled device, hence it require less gate drive power, thus simplifies the gate drive design. Due to the non-latched transistor operation, the IGBT has. Shorter storage time therefore pushes the IGBT to higher SWitching frequency, however, the large conditon voltage drop limited the populerty of IGBT high voltage. Today, only 600A device is avaliable at 6.5 KV. On the order hand, improved GTO device energy. Hard drive and MOS-assisted technologies are used in the intergated gate commutated thyristor (IGCT) and emitter turn off (ETO) thyrsistor. these two device use unity again turn off technique ro cut the storage time of GTO by ten times, thus increase the switching performance closed to that of the IGBT. the low condition loss and rugged stracture make IGCT and ETO more favorable then IGBT. the latest IGCT and ETO device have reached the same power level of GTO.

Keywords: MOSFET, DIODE, POWER CONVERTER, POWER INVERTER, IGCT, IGBT

Edition: Volume 4 Issue 8, August 2015,

Pages: 1239 - 1243

Similar Articles with Keyword 'MOSFET'