International Journal of Science and Research (IJSR)

International Journal of Science and Research (IJSR)
Call for Papers | Fully Refereed | Open Access | Double Blind Peer Reviewed

ISSN: 2319-7064


Downloads: 114

M.Tech / M.E / PhD Thesis | Electronics & Communication Engineering | India | Volume 4 Issue 8, August 2015


8Kb Logic Compatible DRAM based Memory Design for Low Power Systems

Harshita Shrivastava | Rajesh Khatri


Abstract: 8Kb DRAM based memory is implemented for low power systems.3T DRAM gain cell utilizing preferential boosting is used to achieve large data retention time and low leakage current which contributes to low power consumption. Current mode sense amplifier is designed for read operation to achieve high speed which gives output in voltage mode. There are two 4Kb sections in memory architecture which are controlled by internal control circuitry. This architecture has simplest write back circuitry. This Design performs all specific memory functions. This test memory has 20 pins. This design is done in 180nm CMOS technology


Keywords: DRAM, Decoder, Sense amplifier, Control circuit, Logic gates


Edition: Volume 4 Issue 8, August 2015,


Pages: 1267 - 1271


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How to Cite this Article?

Harshita Shrivastava, Rajesh Khatri, "8Kb Logic Compatible DRAM based Memory Design for Low Power Systems", International Journal of Science and Research (IJSR), Volume 4 Issue 8, August 2015, pp. 1267-1271, https://www.ijsr.net/get_abstract.php?paper_id=SUB157372

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