International Journal of Science and Research (IJSR)

International Journal of Science and Research (IJSR)
Call for Papers | Fully Refereed | Open Access | Double Blind Peer Reviewed

ISSN: 2319-7064


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Research Paper | Physics Science | India | Volume 4 Issue 2, February 2015


Acoustic Phonon Limited Cross Section for the Capture of an Electron by an Attractive Trap in Semiconductor Inversion Layer

A. K. Ghorai [2]


Abstract: At low lattice temperature (


Keywords: Semiconductor inversion layer, recombination, acoustic phonon, capture cross section


Edition: Volume 4 Issue 2, February 2015,


Pages: 1837 - 1840


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How to Cite this Article?

A. K. Ghorai, "Acoustic Phonon Limited Cross Section for the Capture of an Electron by an Attractive Trap in Semiconductor Inversion Layer", International Journal of Science and Research (IJSR), Volume 4 Issue 2, February 2015, pp. 1837-1840, https://www.ijsr.net/get_abstract.php?paper_id=SUB151652

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