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Research Paper | Physics Science | Iraq | Volume 3 Issue 9, September 2014
Investigation of the Mole Fraction Effect for Wetting Layer on the Carrier Heating Phenomena in Quantum Dot Semiconductor Material
Dr. Kareem H. Bardan
Abstract: This research have included the studying of carrier heat phenomenon with the aid of transactions nonlinear gain coefficients, the influence mole fraction on the wetting layer had been studied, we has been observed that the increase in mole fraction lead to a change in the dynamics of carriers and determine the occupancy rate for each level, in addition to changing the energy gap for structure and this is leads to an increase in the heating effect on the semiconductor material.
Keywords: Carrier heating, nonlinear gain coefficients, semiconductor optical amplifier and Quantum dot
Edition: Volume 3 Issue 9, September 2014,
Pages: 1840 - 1842
Similar Articles with Keyword 'Carrier'
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Dissertation Chapters, Physics Science, Iraq, Volume 3 Issue 11, November 2014
Pages: 2340 - 2351Digital Modulation Characteristics of Violet InGaN Laser Diodes with Ternary AlGaN and Quaternary AlInGaN Blocking Layers
Rafid A. Abdullah | Kamarulazizi Ibrahim
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Research Paper, Physics Science, India, Volume 5 Issue 5, May 2016
Pages: 1640 - 1644Synthesis, Characterization and Ammonia Sensing Properties of Mn Doped Zinc Oxide Nano-Composite
Saroj D. Patil | R. B. Waghulade [2] | R. S. Khadayate