M. Balasubramanian, K. R. Mural
Abstract: In2Se3 films were pulse electrodeposited on tin oxide coated glass substrates at different duty cycles for the first time. The films were single phase with crystallite size in the range of 15 40 nm. The strain and dislocation density decrased with increase of duty cycle. Post annealing increased the crystallite size from 40 nm to 115 nm. The films exhibited photoconductivity.
Keywords: thin films, electronic material, pulse plating