Downloads: 129
Review Papers | Electrical Engineering | India | Volume 5 Issue 6, June 2016
A Trench Gate Power MOSFET with Reduced Gate Charge - A Review
Abstract: In this paper we have written the review of the work done by Ying Wang, Yan-Juan Liu, Cheng-Hao Yu, and Fei Cao in simulating a novel trench gate power MOSFET with reduced gate charge. They worked with a 2-dimensional device simulator named ATLAS and simulated their MOSFET to obtain input, output and transfer characteristics. It is found that the gate charge is reduced by 49.5 % without increasing the value of Ron. This is done so as to increase the switching speed of the device.
Keywords: Gate Charge, Switching Speed
Edition: Volume 5 Issue 6, June 2016,
Pages: 677 - 679
Similar Articles with Keyword 'Gate'
Downloads: 0
Research Paper, Electrical Engineering, India, Volume 11 Issue 2, February 2022
Pages: 980 - 984SCIG Wind Energy Power Transmission and Conversion System
Faez Mohammad Bashir Aldakar
Downloads: 2
Research Paper, Electrical Engineering, India, Volume 10 Issue 9, September 2021
Pages: 456 - 459Three Phase Three Level Distribution STATCOM Integrated with Solar
Jitesh Kumar Sahu | Devendra Sharma