Downloading: 4H-SiC P-i-N Diodes: Development of Technology and Research of Microwave Switches Based on it
International Journal of Science and Research (IJSR)

International Journal of Science and Research (IJSR)
www.ijsr.net | Open Access | Fully Refereed | Peer Reviewed International Journal

ISSN: 2319-7064


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4H-SiC P-i-N Diodes: Development of Technology and Research of Microwave Switches Based on it

A.A. Lebedev, A.V. Kirillov, L.P. Romanov, A.V. Zubov, A.M. Strelchuk

Abstract: The technology of microwave p-i-n diodes based on silicon carbide (SiC) has been developed. Using this diodes manufactured switches for 3-cm range. It is shown that the developed devices have an operating power of about 10 times the operating power of switches based on Si diodes with an equal base thickness of 5 microns. Outlined ways to further optimize the technology of these devices.

Keywords: SiC, P-i-N diodes, microwave


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