Md. Rubel Sarkar, Mst. Halima Khatun, M. K. R. Khan, Md. Shahjahan
Abstract: In this study, un-doped and Ni-doped SnO2 have been prepared on glass substrate by low cost spray pyrolysis technique. The films were deposited at a temperature of 350 using starting materials of SnCl.5H2O and NiCl.6H2O in air ambient. To study the effect of Ni doping on SnO2 the samples were characterized by using various techniques like XRD, SEM, UVIR Spectrophotometer and Hall effect measurement. Ni has been doped upto 9 % and found that the optical transparency decreases from 84 % to 72 % with the increase of Ni concentration. The optical band gap of the fabricated samples was found to decrease from 3.55 eV to 3.50 eV for un-doped and 9 % Ni-SnO2. It is observed from the XRD study that the films are polycrystalline in nature. Hall Effect measurement shows that the films are n-type in nature and it is observed that the carrier concentration increases with the doping concentration.
Keywords: Ni-doped SnO2, Band gap, Carrier concentration, Hall mobility