International Journal of Science and Research (IJSR)

International Journal of Science and Research (IJSR)
Call for Papers | Fully Refereed | Open Access | Double Blind Peer Reviewed

ISSN: 2319-7064


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Research Paper | Chemistry | Iraq | Volume 6 Issue 12, December 2017


Preparation Poly 2-hydroxy aniline Thin Film by Chemical Bath Deposition Technique for Ammonia Vapor Sensor

Dr. Ahlam M. Farhan | Dr. Abdul-Hussain K. Elttayef | Ashwaq A. Jabor


Abstract: Poly 2-hydroxy aniline organic Semiconductor polymer was prepared using chemical bath deposition technique through oxidation polymerization by adding potassium per sulfate concentration of (0.1M) to (0.2M) of 2-hydroxy aniline at room temperature, The polymer was deposited on glass substrate, Structural, optical properties of thin film were studies and sensing to NH3 vapor.


Keywords: Organic Semiconductor polymer, Poly 2-hydroxy aniline, NH3 gas sensor


Edition: Volume 6 Issue 12, December 2017,


Pages: 129 - 132


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How to Cite this Article?

Dr. Ahlam M. Farhan, Dr. Abdul-Hussain K. Elttayef, Ashwaq A. Jabor, "Preparation Poly 2-hydroxy aniline Thin Film by Chemical Bath Deposition Technique for Ammonia Vapor Sensor", International Journal of Science and Research (IJSR), Volume 6 Issue 12, December 2017, pp. 129-132, https://www.ijsr.net/get_abstract.php?paper_id=ART20177651

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