Downloading: Electrical Properties of SiO2/PSi Hetero Junction Prepared by Electrochemical Etching Process
International Journal of Science and Research (IJSR)

International Journal of Science and Research (IJSR)
www.ijsr.net | Open Access | Fully Refereed | Peer Reviewed International Journal

ISSN: 2319-7064



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Electrical Properties of SiO2/PSi Hetero Junction Prepared by Electrochemical Etching Process

Hussain Kazaal, Ramiz Alansari, Kadhim Aadim, Wassan Dhia

Abstract: In this paper, the electrical properties of porous silicon (PSi) structure fabricated by using the electrochemical etching process in HF acid, SiO2/PSi hetero junction made by deposition of SiO2 layer on porous silicon.The dark I-V characteristics synthesized by electrochemical etching are presented of hetero junction showed are strong depended on etching time. The ideality factor and saturation current of hetero junction are calculated from I-V under forward bias. C-V measurements confirmed that the prepared hetero junctions are abrupt type.

Keywords: porous silicon, HF acid



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