Ultraviolet Characteristics of a Silicon Inversion Layer for Applications in Radiometry

Pearson V.C. Luhanga

Abstract: The inversion-layer (IL) that can be induced in a silicon surface shows very good sensitivity and spectral response in the ultraviolet (UV) region of electromagnetic radiation. As such, it is possible to use this structure as a relatively cheap radiometer for UV radiation measurements. The fabrication process for such a device is shown to be relatively cheaper than that of a diffused pn-junction, which is the typical design for a photocell. Hence the construction of a relatively cheap UV radiometer is possible.

Keywords: ultraviolet, radiometry, silicon inversion layer, photocell

Edition: Volume 5 Issue 7, July 2016,

Pages: 1308 - 1311