Downloads: 110
Research Paper | Engineering Science | India | Volume 6 Issue 1, January 2017
Fabrication and Evaluation of Thin Film Transistor with Improved Electrical Characteristics
Divya K. Nair [2] | Silpa S. Prasad [3] | K. Shreekrishna Kumar [3]
Abstract: Gallium Arsenide is a potential candidate for optoelectronic devices which can be used in Thin Film Technology with Alq3 as gate insulator. The samples of field effect transistor are fabricated using thermal evaporation method. GaAs epilayers showed (00l) orientation with zinc blende structure and good optoelectronic quality with minimal thermoelastic/lattice mismatch strain. The device parameters have been evaluated from the characteristics. The TFTs exhibited good channel modulation and better stability Scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), X-ray powder diffraction (XRD) and the temperature dependence were used to characterize the layers.
Keywords: Thin Film Transistors, channel modulation, thermal evaporation, SEM, EDS
Edition: Volume 6 Issue 1, January 2017,
Pages: 2218 - 2222
Similar Articles with Keyword 'SEM'
Downloads: 105
Research Paper, Engineering Science, Kenya, Volume 5 Issue 4, April 2016
Pages: 1497 - 1500Energy Production from Thermal Gasification of Selected Solid Wastes from Kiambu County, Kenya
Mugo Ephantus [2] | Kinyua Robert [2] | Yasuyuki Nemoto | Njogu Paul [2]
Downloads: 126
M.Tech / M.E / PhD Thesis, Engineering Science, India, Volume 4 Issue 7, July 2015
Pages: 625 - 630Design of Inter-Integrated Circuit with BIST Method
Priyanka Lade | Sanjay Tembhurne