Jitendra Pal Singh
Abstract: Low Noise Amplifier (LNA) of single stage on inductive source degeneration structure for Extremely High Frequency (EHF) is proposed in this paper. The presented LNA for 57GHz-63GHz narrow band system is implemented on 90nm CMOS technology. The proposed technique not only minimizes noise Figureure but also achieves high gain. The simulated prototype has measured a gain magnitude of 18V and achieves input third order intercept point (IIP3) of -5.06dBm, Noise Figureure of less than 1dB (525.20 mdB) and good input matching with small signal amplification (500nV to 500mV).
Keywords: LNA, Low Noise Amplifier, 60 GHz, source degenerated