International Journal of Science and Research (IJSR)

International Journal of Science and Research (IJSR)
Call for Papers | Open Access | Double Blind Peer Reviewed

ISSN: 2319-7064

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M.Tech / M.E / PhD Thesis | Electronics & Communication Engineering | India | Volume 4 Issue 7, July 2015

TCAD Design of Tunnel FET Structures and Extraction of Electrical Characteristics

Ashwin S Raj | Sreejith S [2] | Sajeshkumar U

Abstract: Silicon dioxide (SiO 2) or silica is a metal oxide which comes under fourth group. The properties of SiO 2 includes high thermal stability, good abrasion resistance and good electrical insulation. It is the most commonly used dielectrics in semi- conductor arena. Hafnium oxide (HfO 2) comes under the group of high-k dielectrics. This inorganic compound, which is also known as hafnia acts as a replacement for conventional silicon dioxide dielectric layers. In this paper, we have simulated TFET structures with hafnia and silica as dielectric materials. A considerable increase in capacitance, of around 58 %, was obtained when we changed the dielectric material from silica to hafnia. The dimensions of dielectric layer was kept constant during the simulations. The gaussian doping distribution is very much similar to real doping profiles and is simple in structure. So we adopted gaussian doping profile for source and drain doping. The simulations results showed that TFET structures with SiO 2 dielectric layer exhibited better transfer characteristics than TFET structures with HfO 2 dielectric layer.

Keywords: Tunnel FETs, Gaussian doping, Subthreshold swing, Sentaurus TCAD

Edition: Volume 4 Issue 7, July 2015,

Pages: 2447 - 2451

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How to Cite this Article?

Ashwin S Raj, Sreejith S, Sajeshkumar U, "TCAD Design of Tunnel FET Structures and Extraction of Electrical Characteristics", International Journal of Science and Research (IJSR), Volume 4 Issue 7, July 2015, pp. 2447-2451,

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