Structural and Resistive Property of Cobalt/Silicon Thin Film as a Function of Thickness
International Journal of Science and Research (IJSR)

International Journal of Science and Research (IJSR)
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Research Paper | Material Science and Engineering | India | Volume 4 Issue 5, May 2015

Structural and Resistive Property of Cobalt/Silicon Thin Film as a Function of Thickness

Sumana Kayal, Ranjeet Kumar Brajpuriya, Anil Kumar

The paper presents the structural and resistive property of Co/Si thin film as a function of thickness. The synthesis of Co/Si thin film has done by Resistive Heating. The structural property that deals here is of Three-Dimensional measurement of the sample. The technique used for the structural measurement is Atomic Force Microscopy (AFM). The resistive property is measured by Four-probe technique. Morphology of the thin film surface has been measured by AFM. The roughness shows drastic change with the increase of the thickness. The resistive behaviour shows parabolic carve against thickness.

Keywords: AFM, resistivity, thin film, thickness, parabolic

Edition: Volume 4 Issue 5, May 2015

Pages: 2542 - 2544

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How to Cite this Article?

Sumana Kayal, Ranjeet Kumar Brajpuriya, Anil Kumar, "Structural and Resistive Property of Cobalt/Silicon Thin Film as a Function of Thickness", International Journal of Science and Research (IJSR), https://www.ijsr.net/search_index_results_paperid.php?id=SUB154816, Volume 4 Issue 5, May 2015, 2542 - 2544

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