International Journal of Science and Research (IJSR)

International Journal of Science and Research (IJSR)
Open Access | Fully Refereed | Peer Reviewed

ISSN: 2319-7064


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Research Paper | Electronics & Communication Engineering | India | Volume 4 Issue 4, April 2015


Comparative Study on Logic Gates Using Bulk Transmission Gate and Double Gate Transmission Gate

Sima Baidya, Arindam Chakraborty


Abstract: In VLSI technology, field effect transistors are promising candidate to extend moor-s law in coming years its stated that the number of die or the number of chip will be double in every 18 month. Recently double gate MOSFET has been demonstrated to allow better performance in means of power and delay as power and performance have become the predominant concern for chip designer. In this paper, we are represent the study on logic gates using bulk transmission gate and double gate transmission gate and compare the results in between the two in the form of power i. e leakage power, static power and dynamic power in 45nm technology. So we characterized and validate arithmetic logic gates that are AND gate, XOR gate using the platform cadence virtuoso in 45 nm technology. And the experimental results show that using double gate transmission gate we get the better performance that means low leakage power dissipation.


Keywords: Transmission Gate, Double gate MOSFET, Bulk transmission gate, Double Gate Transmission gate


Edition: Volume 4 Issue 4, April 2015,


Pages: 3321 - 3325


How to Cite this Article?

Sima Baidya, Arindam Chakraborty, "Comparative Study on Logic Gates Using Bulk Transmission Gate and Double Gate Transmission Gate", International Journal of Science and Research (IJSR), https://www.ijsr.net/get_abstract.php?paper_id=SUB153955, Volume 4 Issue 4, April 2015, 3321 - 3325

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