Research Paper | Electronics & Communication Engineering | India | Volume 4 Issue 4, April 2015
Tunnel Magneto Resistance of Magnetic Tunnel Junction
Abhishek Thakur | Raminder Preet Pal Singh
Abstract: In the past two decades electronics has been reaching to its limit of miniaturization and a time will come when further miniaturization will not be possible. Spintronics is the key for opening this deadlock. The science of manipulating the spin of electron with or without the charge to get the desired result is known as Spintronics. Magnetic Tunnel junction is a vital element in Spintronics consist of two ferromagnetic electrodes separated by an insulator layer. Scarcely few works, however, have been carried out thus far in modelling and simulation of Magnetic tunnel junction. Acknowledging the fact that the simulation of tri-layer magnetic tunnel junction will provide a valuable insight for further integration of Spintronics in practical devices, a study of magnetic tunnel junction is presented. In this paper we present result of first principle simulation of TMR of Fe/MgO/Fe magnetic tunnel junction and various constraints affecting it sing Atomix toolkit and NEMO5 Program package. The method in program package is based on carrying out density functional theory (DFT) within the Keldysh Non-equilibrium Green-s function
Keywords: Spintronics, Magnetic Tunnel Junction, Tunnel Magneto Resistance, Parallel P, Antiparallel AP
Edition: Volume 4 Issue 4, April 2015,
Pages: 2109 - 2111
How to Cite this Article?
Abhishek Thakur, Raminder Preet Pal Singh, "Tunnel Magneto Resistance of Magnetic Tunnel Junction", International Journal of Science and Research (IJSR), Volume 4 Issue 4, April 2015, pp. 2109-2111, https://www.ijsr.net/get_abstract.php?paper_id=SUB153503
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